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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJW16010A/D MJW16010A* Designer'sTM Data Sheet NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. Typical Applications: Features: * * * * * * Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits * Collector-Emitter Voltage -- VCEV = 1000 Vdc * Fast Turn-Off Times 50 ns Inductive Fall Time -- 100_C (Typ) 90 ns Inductive Crossover Time -- 100_C (Typ) 900 ns Inductive Storage Time -- 100_C (Typ) * 100_C Performance Specified for: Reverse-Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents * Extended FBSOA Rating Using Ultra-fast Rectifiers * Extremely High RBSOA Capability *Motorola Preferred Device POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 AND 175 WATTS II I IIIIIIIIIIIIIIIIIIIIIII II II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIII I I I II IIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII II II III I IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO VCEV VEB IC ICM IB IBM PD Value 500 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage 1000 6 Collector Current-- Continuous -- Peak(1) 15 20 10 15 Base Current -- Continuous -- Peak(1) Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above TC = 25_C 135 54 1.09 Watts W/_C IC Operating and Storage Junction Temperature Range TJ, Tstg - 55 to 150 CASE 340K-01 TO-247AE THERMAL CHARACTERISTICS Characteristic Symbol RJC TL Max Unit Thermal Resistance, Junction to Case 0.92 275 _C/W _C Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cyclev 10%. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer's and SWITCHMODE are trademarks of Motorola, Inc. REV 4 (c) Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I I IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJW16010A (1) Pulse Test: PW = 300 s, Duty Cycle ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS(1) SECOND BREAKDOWN OFF CHARACTERISTICS(1) Resistive Load (Table 2) Inductive Load (Table 1) Fall Time Storage Time Fall Time Storage Time Rise Time Delay Time Crossover Time Fall Time Storage Time Crossover Time Fall Time Storage Time Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 kHz) DC Current Gain (IC = 15 Adc, VCE = 5 Vdc) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 5 Adc, IB = 1 Adc) (IC = 10 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100_C) Clamped Inductive SOA with Base Reverse Biased Second Breakdown Collector Current with Base Forward Biased Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) Collector Cutoff Current (VCE = 1000 Vdc, RBE = 50 , TC = 100_C) Collector Cutoff Current (VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) Collector-Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) 2 ( (IC = 10 Adc, Ad , VCC = 250 Vdc, IB1 = 1 3 Adc, 1.3 Adc PW = 30 s, Duty C l D Cycle 2%) (IC = 10 Adc Ad Adc, IB1 = 1.3 Adc, , VBE(off) = 5 Vdc, VCE(pk) = 400 Vdc) Characteristic v v 2%. (VBE(off) = 5 Vdc) ( (IB2 = 2 6 Ad , 2.6 Adc, RB2 = 1.6 ) (TJ = 1 0 C) 150_C) (TJ = 100 C) 100_C) VCEO(sus) VCE(sat) VBE(sat) Symbol RBSOA Motorola Bipolar Power Transistor Device Data IEBO ICER ICEV Cob hFE IS/b tsv tsv td ts ts tc tfi tc tfi tr tf tf Min 500 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 5 See Figure 14a or 14b 0.005 0.020 0.003 0.020 1300 1100 0.25 0.45 0.60 Typ 700 175 325 120 900 1.2 1.2 25 70 90 50 -- -- 8 See Figure 15 80 3000 2000 0.15 0.15 1.0 Max 400 600 100 300 250 400 1.5 1.5 0.7 1 1.5 1.0 -- -- -- -- -- -- -- mAdc mAdc mAdc Unit Vdc Vdc Vdc pF ns ns -- MJW16010A TYPICAL STATIC CHARACTERISTICS 50 30 hFE, DC CURRENT GAIN 20 TJ = 100C 25C VCE = 5 V VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.15 0.2 0.3 IC/IB = 10 TJ = 25C IC/IB = 10 TJ = 100C 10 7 5 3 0.2 - 55C IC/IB = 5 TJ = 25C 0.5 2 1 3 5 IC, COLLECTOR CURRENT (AMPS) 10 15 0.3 0.5 3 1 2 5 IC, COLLECTOR CURRENT (AMPS) 10 20 Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Region VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 5 VBE, BASE-EMITTER VOLTAGE (VOLTS) 1.5 1 IC/IB = 10 TJ = 25C IC/IB = 10 TJ = 100C 2 1 0.5 10 A 0.2 0.1 0.01 0.02 5A IC = 1 A 0.05 0.1 0.2 0.5 1 2 5 10 15 A 0.5 0.3 0.2 0.15 0.15 0.2 0.3 0.5 1 2 3 5 10 15 IB, BASE CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector-Emitter Saturation Region Figure 4. Base-Emitter Saturation Region 10 k 5k 3k 2k 1k 500 300 200 100 50 20 10 0.1 0.3 0.5 12 5 10 20 30 50 100 VR, REVERSE VOLTAGE (VOLTS) 300 500 850 Cob Cib C, CAPACITANCE (pF) TC = 25C Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3 MJW16010A TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS IC/IB1 = 5, TC = 75C, VCE(pk) = 400 V 5000 3000 2000 t sv, STORAGE TIME (ns) 1000 500 300 200 100 0.07 0.05 1.5 VBE(off) = 0 V t sv, STORAGE TIME (ns) 2V 5V 5000 3000 2000 1000 700 500 300 200 100 0.05 1.5 VBE(off) = 0 V 2V 5V IC/IB1 = 10, TC = 75C, VCE(pk) = 400 V 2 3 5 7 10 15 2 3 5 7 10 15 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 6. Storage Time Figure 7. Storage Time 1000 tfi, COLLECTOR CURRENT FALL TIME (ns) tfi, COLLECTOR CURRENT FALL TIME (ns) 500 300 200 5V 100 50 2V VBE(off) = 0 V 1000 500 300 200 100 50 5V 20 10 1.5 2V VBE(off) = 0 V 20 10 1.5 2 3 5 7 10 15 2 3 5 7 10 15 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 8. Collector Current Fall Time Figure 9. Collector Current Fall Time 1500 1000 t c , CROSSOVER TIME (ns) t c , CROSSOVER TIME (ns) VBE(off) = 0 V 500 300 200 100 50 20 15 1.5 5V 2V 1500 1000 500 300 200 100 50 20 15 1.5 2V 5V VBE(off) = 0 V 2 3 5 7 10 15 2 3 5 7 10 15 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 10. Crossover Time 4 Figure 11. Crossover Time Motorola Bipolar Power Transistor Device Data MJW16010A Table 1. Inductive Load Switching Drive Circuit +15 1 F 150 100 100 F MTP8P10 MTP8P10 RB1 A MPF930 50 MUR105 MTP12N10 500 F 150 Voff *Tektronix AM503 *P6302 or Equivalent Scope -- Tektronix 7403 or Equivalent T1 (ICpk [ LcoilCC ) V T1 0V -V +V MJE210 1 F RB2 VCEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA Inductive Switching L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 RBSOA L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 A *IB Vclamp VCC T.U.T. 1N4246GP IC(pk) IC VCE(pk) VCE IB1 IB IB2 *IC MPF930 +10 L T1 adjusted to obtain IC(pk) Note: Adjust Voff to obtain desired VBE(off) at Point A. VCE(pk) 90% IC(pk) tfi tc tti I B2 , REVERSE BASE CURRENT (AMPS) IC(pk) 90% VCE(pk) IC tsv trv 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 VBE(off), REVERSE BASE VOLTAGE (VOLTS) 5 1A IC = 10 A TC = 25C IB1 = 2 A VCE IB 10% VCE(pk) 90% IB1 10% IC(pk) 2% IC t, TIME Figure 12. Inductive Switching Measurements Figure 13. Peak Reverse Base Current Table 2. Resistive Load Switching +15 H.P. 214 OR EQUIV. P.G. RB = 8.5 50 td and tr *IB T.U.T. RL VCC *IC ts and tf 1 F 150 100 100 F MTP8P10 MTP8P10 RB1 A V(off) adjusted to give specified off drive MPF930 +10 V MPF930 50 MUR105 RB2 MTP12N10 VCC Vin 0V tr 15 ns 11 V RL IC IB 250 Vdc 25 10 A 1.3 A VCC IC IB1 IB2 RB1 RB2 RL 250 V 10 A 1.3 A Per Spec 11.5 Per Spec 25 Voff 500 F 150 MJE210 1 F A *IB T.U.T. *IC VCC RL *Tektronix AM503 *P6302 or Equivalent Motorola Bipolar Power Transistor Device Data 5 MJW16010A GUARANTEED OPERATING AREA INFORMATION 0.5 0.3 0.2 0.1 0.05 0.03 20 IC, COLLECTOR CURRENT (AMPS) POWER DERATING FACTOR (%) 16 12 8 IC/IB1 4 TJ 100C VBE(off) = 0 V 0 0 600 800 200 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 VBE(off) = 5 V 4 Figure 15. Maximum Reverse Biased Safe Operating Area +15 1 F 150 100 100 F MTP8P10 10 F MTP8P10 RB1 MPF930 +10 MPF930 50 MUR105 RB2 MTP12N10 500 F 150 Voff MJE210 1 F MUR105 6 EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE 30 20 10 5 3 1 TC = 25C 10 s REGION II -- EXPANDED FBSOA USING MUR8100 ULTRA-FAST RECTIFIER, SEE FIGURE 17 1 ms dc 100 ns II BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 100 1000 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) Figure 14. Maximum Rated Forward Biased Safe Operating Area 100 80 SECOND BREAKDOWN DERATING THERMAL DERATING 60 40 20 0 0 40 80 120 TC, CASE TEMPERATURE (C) 160 200 Figure 16. Power Derating VCE (1000 V MAX) 10 mH MUR8100 MUR1100 T.U.T. Note: Test Circuit for Ultra-fast FBSOA Note: RB2 = 0 and VOff = - 5 Volts Figure 17. Switching Safe Operating Area Motorola Bipolar Power Transistor Device Data MJW16010A r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 RJC(t) = r(t) RJC RJC = 1 or 0.92CW TJ(pk) - TC = P(pk) RJC(t) SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 23 5 t, TIME (ms) 10 20 30 50 P(pk) 0.03 0.02 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 Figure 18. Thermal Response SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 14a and 14b is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figures 14a and 14b may be found at any case temperature by using the appropriate curve on Figure 16. TJ(pk) may be calculated from the data in Figure 18. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 15 gives the RBSOA characteristics. voltage. A transistor which safely dissipates 100 watts at 10 volts will typically dissipate less than 10 watts at its rated V CEO(sus). From a power handling point of view, current and voltage are not interchangeable (see Application Note AN875). 2. TURN-ON -- Safe turn-on load line excursions are bounded by pulsed FBSOA curves. The 10 s curve applies for resistive loads, most capacitive loads, and inductive loads that are clamped by standard or fast recovery rectifiers. Similarly, the 100 ns curve applies to inductive loads which are clamped by ultra- fast recovery rectifiers, and are valid for turn-on crossover times less than 100 ns (see Application Note AN952). At voltages above 75% of V CEO(sus), it is essential to provide the transistor with an adequate amount of base drive VERY RAPIDLY at turn-on. More specifically, safe operation according to the curves is dependent upon base current rise time being less than collector current rise time. As a general rule, a base drive compliance voltage in excess of 10 volts is required to meet this condition (see Application Note AN875). 3. TURN-OFF -- A bipolar transistor's ability to withstand turn-off stress is dependent upon its forward base drive. Gross overdrive violates the RBSOA curve and risks transistor failure. For this reason, circuits which use fixed base drive are often more likely to fail at light loads due to heavy overdrive (see Application Note AN875). 4. OPERATION ABOVE VCEO(sus) -- When bipolars are operated above collector-emitter breakdown, base drive is crucial. A rapid application of adequate forward base current is needed for safe turn-on, as is a stiff negative bias needed for safe turn-off. Any hiccup in the base-drive circuitry that even momentarily violates either of these conditions will likely cause the transistor to fail. Therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp input signal (see Application Note AN952). SWITCHMODE DESIGN CONSIDERATIONS 1. FBSOA -- Allowable dc power dissipation in bipolar power transistors decreases dramatically with increasing collector-emitter Motorola Bipolar Power Transistor Device Data 7 MJW16010A SWITCHMODE III DESIGN CONSIDERATIONS (Cont.) 5. RBSOA -- Reverse Biased Safe Operating Area has a first order dependency on circuit configuration and drive parameters. The RBSOA curves in this data sheet are valid only for the conditions specified. For a comparison of RBSOA results in several types of circuits (see Application Note AN951). 6. DESIGN SAMPLES -- Transistor parameters tend to vary much more from wafer lot to wafer lot, over long periods of time, than from one device to the next in the same wafer lot. For design evaluation it is advisable to use transistors from several different date codes. 7. BAKER CLAMPS -- Many unanticipated pitfalls can be avoided by using Baker Clamps. MUR105 and MUR1100 diodes are recommended for base drives less than 1 amp. Similarly, MUR405 and MUR4100 types are well-suited for higher drive requirements (see Article Reprint AR131). 8 Motorola Bipolar Power Transistor Device Data MJW16010A PACKAGE DIMENSIONS 0.25 (0.010) M -Q- TBM -T- E -B- U L R 1 2 3 C 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 A K P -Y- V F D 0.25 (0.010) M H J G DIM A B C D E F G H J K L P Q R U V STYLE 3: PIN 1. 2. 3. 4. YQ S BASE COLLECTOR EMITTER COLLECTOR CASE 340K-01 ISSUE O Motorola Bipolar Power Transistor Device Data 9 MJW16010A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 10 Motorola Bipolar Power Transistor Device Data MJW16010A/D *MJW16010A/D* |
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